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HGT1S7N60B3D - Harris Corporation - Transistors - IGBTs - Single

HGT1S7N60B3D

Harris Corporation

14A, 600V, N-CHANNEL IGBT

HGT1S7N60B3D is a Transistors - IGBTs - Single manufactured by Harris Corporation. 14A, 600V, N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA, current - collector (ic) (max) 14 A.

In Stock: 400

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)14 A
Current - Collector Pulsed (Icm)56 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 7A
Power - Max60 W
Switching Energy160µJ (on), 120µJ (off)
Input TypeStandard
Gate Charge30 nC
Td (on/off) @ 25°C26ns/130ns
Test Condition480V, 7A, 50Ohm, 15V
Reverse Recovery Time (trr)21 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageI2PAK (TO-262)

Frequently Asked Questions

HGT1S7N60B3D is a Transistors - IGBTs - Single manufactured by Harris Corporation. 14A, 600V, N-CHANNEL IGBT

The mounting type of HGT1S7N60B3D is Through Hole.

The operating temperature range of HGT1S7N60B3D is -55°C ~ 150°C (TJ).

The package type of HGT1S7N60B3D is TO-262-3 Long Leads, I²Pak, TO-262AA.

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