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HGT1S15N120C3 - Harris Corporation - Transistors - IGBTs - Single

HGT1S15N120C3

Harris Corporation

35A, 1200V, N-CHANNEL IGBT

HGT1S15N120C3 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 35A, 1200V, N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA, current - collector (ic) (max) 35 A.

In Stock: 4,004

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)35 A
Current - Collector Pulsed (Icm)120 A
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 15A
Power - Max164 W
Switching Energy-
Input TypeStandard
Gate Charge100 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageI2PAK (TO-262)

Frequently Asked Questions

HGT1S15N120C3 is a Transistors - IGBTs - Single manufactured by Harris Corporation. 35A, 1200V, N-CHANNEL IGBT

The mounting type of HGT1S15N120C3 is Through Hole.

The operating temperature range of HGT1S15N120C3 is -55°C ~ 150°C (TJ).

The package type of HGT1S15N120C3 is TO-262-3 Long Leads, I²Pak, TO-262AA.

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