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HGT1S12N60C3D - Harris Corporation - Transistors - IGBTs - Single

HGT1S12N60C3D

Harris Corporation

24A, 600V, N-CHANNEL IGBT

HGT1S12N60C3D is a Transistors - IGBTs - Single manufactured by Harris Corporation. 24A, 600V, N-CHANNEL IGBT. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-262-3 Long Leads, I²Pak, TO-262AA, current - collector (ic) (max) 24 A.

In Stock: 2,637

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)24 A
Current - Collector Pulsed (Icm)96 A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 15A
Power - Max104 W
Switching Energy-
Input TypeStandard
Gate Charge62 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)40 ns
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageI2PAK (TO-262)

Frequently Asked Questions

HGT1S12N60C3D is a Transistors - IGBTs - Single manufactured by Harris Corporation. 24A, 600V, N-CHANNEL IGBT

The mounting type of HGT1S12N60C3D is Through Hole.

The operating temperature range of HGT1S12N60C3D is -40°C ~ 150°C (TJ).

The package type of HGT1S12N60C3D is TO-262-3 Long Leads, I²Pak, TO-262AA.

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