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HGT1S12N60B3S - Harris Corporation - Transistors - IGBTs - Single

HGT1S12N60B3S

Harris Corporation

27A, 600V, UFS N-CHANNEL IGBT

HGT1S12N60B3S is a Transistors - IGBTs - Single manufactured by Harris Corporation. 27A, 600V, UFS N-CHANNEL IGBT. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 27 A.

In Stock: 1,600

Product Attributes

AttributeValue
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)27 A
Current - Collector Pulsed (Icm)110 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 12A
Power - Max104 W
Switching Energy304µJ (on), 250µJ (off)
Input TypeStandard
Gate Charge68 nC
Td (on/off) @ 25°C26ns/150ns
Test Condition480V, 12A, 25Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK (TO-263)

Frequently Asked Questions

HGT1S12N60B3S is a Transistors - IGBTs - Single manufactured by Harris Corporation. 27A, 600V, UFS N-CHANNEL IGBT

The mounting type of HGT1S12N60B3S is Surface Mount.

The operating temperature range of HGT1S12N60B3S is -55°C ~ 150°C (TJ).

The package type of HGT1S12N60B3S is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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