INSULATED GATE BIPOLAR TRANSISTO
SGS10N60RUFDTU is a Transistors - IGBTs - Single manufactured by Fairchild Semiconductor. INSULATED GATE BIPOLAR TRANSISTO. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, current - collector (ic) (max) 16 A.
In Stock: 86,597
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 16 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 10A |
| Power - Max | 55 W |
| Switching Energy | 141µJ (on), 215µJ (off) |
| Input Type | Standard |
| Gate Charge | 30 nC |
| Td (on/off) @ 25°C | 15ns/36ns |
| Test Condition | 300V, 10A, 20Ohm, 15V |
| Reverse Recovery Time (trr) | 60 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220F-3 |
Submit your RFQ for SGS10N60RUFDTU and get a quote within 24 hours.
3J LIMITED
