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FGA50S110P - Fairchild Semiconductor - Transistors - IGBTs - Single

FGA50S110P

Fairchild Semiconductor

INSULATED GATE BIPOLAR TRANSISTO

FGA50S110P is a Transistors - IGBTs - Single manufactured by Fairchild Semiconductor. INSULATED GATE BIPOLAR TRANSISTO. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 50 A.

In Stock: 38,700

Product Attributes

AttributeValue
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1100 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)120 A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 50A
Power - Max300 W
Switching Energy-
Input TypeStandard
Gate Charge195 nC
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN

Frequently Asked Questions

FGA50S110P is a Transistors - IGBTs - Single manufactured by Fairchild Semiconductor. INSULATED GATE BIPOLAR TRANSISTO

The mounting type of FGA50S110P is Through Hole.

The operating temperature range of FGA50S110P is -55°C ~ 175°C (TJ).

The package type of FGA50S110P is TO-3P-3, SC-65-3.

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