INSULATED GATE BIPOLAR TRANSISTO
FGA30N65SMD is a Transistors - IGBTs - Single manufactured by Fairchild Semiconductor. INSULATED GATE BIPOLAR TRANSISTO. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-3P-3, SC-65-3, current - collector (ic) (max) 60 A.
In Stock: 11,102
| Attribute | Value |
|---|---|
| Product Status | Active |
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Power - Max | 300 W |
| Switching Energy | 716µJ (on), 208µJ (off) |
| Input Type | Standard |
| Gate Charge | 87 nC |
| Td (on/off) @ 25°C | 14ns/102ns |
| Test Condition | 400V, 30A, 6Ohm, 15V |
| Reverse Recovery Time (trr) | 35 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3PN |
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