SDR, 256MB, 16M X 16, 3.3V, 54-B
AS4C16M16SB-6BIN is a Memory manufactured by Alliance Memory, Inc.. SDR, 256MB, 16M X 16, 3.3V, 54-B. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TFBGA.
In Stock: 305
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | LVTTL |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-TFBGA (8x8) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| 70V3569S5BFI | Renesas Electronics America Inc | IC SRAM 576KBIT PAR 208CABGA | 98% | View |
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| W989D2DBJX6I TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 90VFBGA | 91% | View |
| W949D2DBJX5I TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 90VFBGA | 83% | View |
| W94AD6KBHX5I TR | Winbond Electronics | IC DRAM 1GBIT PARALLEL 60VFBGA | 83% | View |
| 71V3556SA100BGGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 119PBGA | 74% | View |
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