IC DRAM 1GBIT PARALLEL 60VFBGA
W94AD6KBHX5I TR is a Memory manufactured by Winbond Electronics. IC DRAM 1GBIT PARALLEL 60VFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 60-TFBGA.
In Stock: 7,742
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 1Gb (64M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-VFBGA (8x9) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W949D2DBJX5I TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 90VFBGA | 100% | View |
| MT46H32M16LFBF-5 IT:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60VFBGA | 100% | View |
| MT46H256M32L4JV-5 IT:B TR | Micron Technology Inc. | IC DRAM 8GBIT PARALLEL 168VFBGA | 100% | View |
| AS4C16M16SB-6BIN | Alliance Memory, Inc. | SDR, 256MB, 16M X 16, 3.3V, 54-B | 83% | View |
| 70V3569S5BFI | Renesas Electronics America Inc | IC SRAM 576KBIT PAR 208CABGA | 81% | View |
| 71V3556SA100BGGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 119PBGA | 57% | View |
Submit your RFQ for W94AD6KBHX5I TR and get a quote within 24 hours.
3J LIMITED
