IC DRAM 512MBIT PARALLEL 90VFBGA
W989D2DBJX6I TR is a Memory manufactured by Winbond Electronics. IC DRAM 512MBIT PARALLEL 90VFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 90-TFBGA.
In Stock: 3,192
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H32M16LFBF-6 AAT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60VFBGA | 100% | View |
| MT46H8M32LFB5-6 IT:A TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 90VFBGA | 97% | View |
| MT46H64M16LFBF-5 AIT:B | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 60VFBGA | 92% | View |
| MT46H64M32LFMA-5 IT:A TR | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 168WFBGA | 92% | View |
| AS4C16M16SB-6BIN | Alliance Memory, Inc. | SDR, 256MB, 16M X 16, 3.3V, 54-B | 91% | View |
| 71V65603S100BQGI8 | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 165CABGA | 66% | View |
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