| Mfr Part # | Qty | Price | Product Status | Transistor Type | Frequency | Gain | Voltage - Test | Current Rating (Amps) | Noise Figure | Current - Test | Power - Output | Voltage - Rated | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MMRF1305HSR5
FET RF 2CH 133V 512MHZ NI780S-4
NXP USA Inc.
|
8,486 | 162.64620 | Active | LDMOS (Dual) | 512MHz | 26dB | 50 V | - | - | 100 mA | 100W | 133 V | NI-780S-4L | NI-780S-4L | Details |
|
PD55003L-E
TRANSISTOR RF 5X5 POWERFLAT
STMicroelectronics
|
5,813 | 7.78000 | Active | LDMOS | 500MHz | 19dB | 12.5 V | 2.5A | - | 50 mA | 3W | 40 V | 8-PowerVDFN | PowerFLAT™ (5x5) | Details |
|
MRF7S24250NR3
RF MOSFET LDMOS 30V OM780-2
NXP USA Inc.
|
149 | 139.45000 | Obsolete | LDMOS | 2.45GHz | 14.7dB | 30 V | - | - | 100 mA | 256W | 65 V | OM-780-2 | OM-780-2 | Details |
|
BLF888DU
RF FET LDMOS 104V 21DB SOT539A
Ampleon USA Inc.
|
8,617 | 259.20000 | Not For New Designs | LDMOS | 860MHz | 21dB | 50 V | - | - | 1.3 A | 250W | 104 V | SOT-539A | SOT539A | Details |
|
BLF7G22LS-250P,112
N-CHANNEL, MOSFET
NXP USA Inc.
|
60 | 133.68000 | Active | LDMOS (Dual), Common Source | 2.11GHz ~ 2.17GHz | 18.5dB | 28 V | 2.8µA | - | 1.9 A | 250W | 65 V | SOT-539B | SOT539B | Details |
|
AFV141KGSR5
IC TRANS RF LDMOS
NXP USA Inc.
|
3,582 | 1111.53740 | Active | LDMOS (Dual) | 1.4GHz | 17.7dB | 50 V | - | - | 100 mA | 1000W | 105 V | NI-1230-4S GW | NI-1230-4S GULL | Details |
|
A2G22S251-01SR3
AIRFAST RF POWER GAN TRANSISTOR
NXP USA Inc.
|
2,752 | 157.47930 | Active | LDMOS | 1.805GHz ~ 2.2GHz | 17.7dB | 48 V | - | - | 200 mA | 52dBm | 125 V | NI-400S-2S | NI-400S-2S | Details |
|
MMRF1312HR5
TRANS 900-1215MHZ 1000W PEAK 50V
NXP USA Inc.
|
45 | 869.74000 | Active | LDMOS (Dual) | 1.03GHz | 19.6dB | 50 V | - | - | 100 mA | 1000W | 112 V | SOT-979A | NI-1230-4H | Details |
|
BLL6H0514LS-130,11
RF FET LDMOS 100V 17DB SOT1135B
Ampleon USA Inc.
|
3,321 | 160.09500 | Not For New Designs | LDMOS | 1.2GHz ~ 1.4GHz | 17dB | 50 V | 18A | - | 50 mA | 130W | 100 V | SOT-1135B | CDFM2 | Details |
|
PTVA127002EV-V1-R250
RF MOSFET TRANSISTORS
Wolfspeed, Inc.
|
7,131 | 420.65200 | Active | - | - | - | - | - | - | - | - | - | - | - | Details |
|
PD84006-E
FET RF 25V 870MHZ PWRSO-10RF
STMicroelectronics
|
144 | 16.00000 | Obsolete | LDMOS | 870MHz | 15dB | 7.5 V | 5A | - | 150 mA | 6W | 25 V | PowerSO-10 Exposed Bottom Pad | 10-PowerSO | Details |
|
RF3L05250CB4
250 W 28/32 V RF POWER LDMOS TRA
STMicroelectronics
|
17 | 190.58000 | Active | LDMOS | 1GHz | 18dB | 28 V | 1µA | - | 100 mA | 250W | 90 V | LBB | LBB | Details |
|
BLF7G24L-100,112
RF TRANSISTOR
NXP USA Inc.
|
45 | 57.91000 | Obsolete | LDMOS | 2.3GHz ~ 2.4GHz | 18dB | 28 V | 28A | - | 900 mA | 20W | 65 V | SOT-502A | SOT502A | Details |
|
BF861C,215
RF MOSFET N-CH JFET TO236AB
NXP USA Inc.
|
4,298 | 0.27000 | Obsolete | N-Channel JFET | - | - | - | 25mA | - | - | - | 25 V | TO-236-3, SC-59, SOT-23-3 | SOT-23 (TO-236AB) | Details |
|
BLM7G1822S-40ABGY
RF FET LDMOS 65V 31.5DB SOT12122
Ampleon USA Inc.
|
2,804 | 30.63000 | Last Time Buy | LDMOS (Dual) | 2.17GHz | 31.5dB | 28 V | - | - | 20 mA | 2W | 65 V | SOT-1212-2 | 16-HSOP | Details |
|
CGHV27060MP
RF MOSFET HEMT 50V 20TSSOP
Wolfspeed, Inc.
|
212 | 122.54000 | Active | HEMT | 2.7GHz | 16.5dB | 50 V | 6.3A | - | 125 mA | 80W | 150 V | 20-TSSOP (0.173", 4.40mm Width) | 20-TSSOP | Details |
|
BLM9D2527-20ABZ
RF MOSFET LDMOS SOT1462-1
Ampleon USA Inc.
|
196 | 32.25000 | Obsolete | LDMOS | 2.5GHz ~ 2.7GHz | - | - | - | - | - | 20W | 28 V | 20-QFN Exposed Pad | 20-PQFN (8x8) | Details |
|
2SK853A(1)-T1-A
SMALL SIGNAL FET
Renesas Electronics America Inc
|
9,000 | 0.17000 | Obsolete | - | - | - | - | - | - | - | - | - | - | - | Details |
|
MGSF2N02ELT1H
NFET SOT23 20V 2.8A 85MO
onsemi
|
12,129 | 0.14000 | Active | - | - | - | - | - | - | - | - | - | - | - | Details |
|
BLS6G2731S-120,112
RF FET LDMOS 60V 13.5DB SOT502B
Ampleon USA Inc.
|
4,722 | 221.86500 | Active | LDMOS | 2.7GHz ~ 3.1GHz | 13.5dB | 32 V | 33A | - | 100 mA | 120W | 60 V | SOT-502B | SOT502B | Details |
|
A3G26D055N-1805
RF REFERENCE CIRCUIT 25W 1805-18
NXP USA Inc.
|
5,428 | 703.12000 | Active | GaN | 100MHz ~ 2.69GHz | 13.9dB | 48 V | - | - | 40 mA | 8W | 125 V | 6-LDFN Exposed Pad | 6-PDFN (7x6.5) | Details |
|
BLF7G10LS-250,112
N-CHANNEL, MOSFET
NXP USA Inc.
|
55 | 103.21000 | Active | LDMOS | 869MHz ~ 960MHz | 19.5dB | 30 V | 5µA | - | 1.8 A | 250W | 65 V | SOT-502B | SOT502B | Details |
|
PD55015TR-E
TRANS RF N-CH FET POWERSO-10RF
STMicroelectronics
|
9,209 | 21.02000 | Active | LDMOS | 500MHz | 14dB | 12.5 V | 5A | - | 150 mA | 15W | 40 V | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | PowerSO-10RF (Formed Lead) | Details |
|
MRF13750HSR5
RF POWER LDMOS TRANSISTOR 750 W
NXP USA Inc.
|
8,955 | 370.82100 | Active | LDMOS | 700MHz ~ 1.3GHz | 20.4dB | 50 V | 10µA | - | 200 mA | 750W | 105 V | NI-1230-4S | NI-1230-4S | Details |
Submit your RFQ and our team will source it for you.
3J LIMITED