RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
A3G26D055N-1805 - NXP USA Inc. - Transistors - FETs, MOSFETs - RF

A3G26D055N-1805

NXP USA Inc.

RF REFERENCE CIRCUIT 25W 1805-18

A3G26D055N-1805 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. RF REFERENCE CIRCUIT 25W 1805-18. Key specifications: voltage - rated 125 V, package / case 6-LDFN Exposed Pad, current - test 40 mA, power - output 8W.

In Stock: 5,428

Product Attributes

AttributeValue
Product StatusActive
Transistor TypeGaN
Frequency100MHz ~ 2.69GHz
Gain13.9dB
Voltage - Test48 V
Current Rating (Amps)-
Noise Figure-
Current - Test40 mA
Power - Output8W
Voltage - Rated125 V
Package / Case6-LDFN Exposed Pad
Supplier Device Package6-PDFN (7x6.5)

Frequently Asked Questions

A3G26D055N-1805 is a Transistors - FETs, MOSFETs - RF manufactured by NXP USA Inc.. RF REFERENCE CIRCUIT 25W 1805-18

The supply voltage of A3G26D055N-1805 is 125 V.

The package type of A3G26D055N-1805 is 6-LDFN Exposed Pad.

The current rating of A3G26D055N-1805 is 40 mA.

Related Products

Manufacturers in Transistors - FETs, MOSFETs - RF

Need a Quote for This Part?

Submit your RFQ for A3G26D055N-1805 and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.