| Mfr Part # | Qty | Price | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDC6308P
P-CHANNEL MOSFET
Fairchild Semiconductor
|
30,040 | 0.53000 | Active | 2 P-Channel (Dual) | - | 20V | 1.7A (Ta) | 180mOhm @ 1.7A, 4.5V | 1.5V @ 250µA | 5nC @ 4.5V | 265pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | Details |
|
FDY4001CZ
SMALL SIGNAL P-CHANNEL MOSFET
Fairchild Semiconductor
|
114,272 | 0.10000 | Obsolete | N and P-Channel | Logic Level Gate | 20V | 200mA, 150mA | 5Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 1.1nC @ 4.5V | 60pF @ 10V | 446mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563F | Details |
|
DMC2700UDM-7
MOSFET N/P-CH 20V SOT26
Diodes Incorporated
|
122,550 | 0.44000 | Active | N and P-Channel | Logic Level Gate | 20V | 1.34A, 1.14A | 400mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.74nC @ 4.5V | 60.67pF @ 16V | 1.12W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | Details |
|
DMN2004DMK-7
MOSFET 2N-CH 20V 0.54A SOT-26
Diodes Incorporated
|
1,957 | 0.46000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 540mA | 550mOhm @ 540mA, 4.5V | 1V @ 250µA | - | 150pF @ 16V | 225mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | Details |
|
SI4532DY
MOSFET N/P-CH 30V 3.9/3.5A 8SOIC
onsemi
|
3,644 | 1.23000 | Active | N and P-Channel | Standard | 30V | 3.9A, 3.5A | 65mOhm @ 3.9A, 10V | 3V @ 250µA | 15nC @ 10V | 235pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
UPA1759G-E1-AT
N-CHANNEL POWER MOSFET
Renesas Electronics America Inc
|
1,986 | 0.53000 | Obsolete | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5A | 150mOhm @ 2.5A, 10V | 2.5V @ 1mA | 8nC @ 10V | 190pF @ 10V | 2W | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-PSOP | Details |
|
BUK7V4R2-40HX
BUK7V4R2-40H - DUAL N-CHANNEL 40
Nexperia USA Inc.
|
6,741 | 3.13000 | Active | 2 N-Channel (Half Bridge) | Standard | 40V | 98A (Ta) | 4.2mOhm @ 20A, 10V | 3.6V @ 1mA | 37nC @ 10V | 2590pF @ 25V | 85W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D | Details |
|
SI4936CDY-T1-E3
MOSFET 2N-CH 30V 5.8A 8SO
Vishay Siliconix
|
4,779 | 0.26400 | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.8A | 40mOhm @ 5A, 10V | 3V @ 250µA | 9nC @ 10V | 325pF @ 15V | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
ALD110908APAL
MOSFET 2N-CH 10.6V 8DIP
Advanced Linear Devices Inc.
|
6,593 | 6.90040 | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
FDS6898AZ
MOSFET 2N-CH 20V 9.4A 8SOIC
onsemi
|
9,455 | 1.30000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 9.4A | 14mOhm @ 9.4A, 4.5V | 1.5V @ 250µA | 23nC @ 4.5V | 1821pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
SIZ710DT-T1-GE3
MOSFET 2N-CH 20V 16A POWERPAIR
Vishay Siliconix
|
9,787 | 1.56000 | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 20V | 16A, 35A | 6.8mOhm @ 19A, 10V | 2.2V @ 250µA | 18nC @ 10V | 820pF @ 10V | 27W, 48W | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerPair™ | 6-PowerPair™ | Details |
|
DMP2160UFDBQ-7
MOSFET 2P-CH 20V 3.8A 6UDFN
Diodes Incorporated
|
9,546 | 0.61000 | Active | 2 P-Channel (Dual) | Standard | 20V | 3.8A | 70mOhm @ 2.8A, 4.5V | 900mV @ 250µA | 6.5nC @ 4.5V | 536pF @ 10V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
|
DMG6301UDW-7
MOSFET 2N-CH 25V 0.24A SOT363
Diodes Incorporated
|
2,104 | 0.45000 | Active | 2 N-Channel (Dual) | Standard | 25V | 240mA | 4Ohm @ 400mA, 4.5V | 1.5V @ 250µA | 0.36nC @ 4.5V | 27.9pF @ 10V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 | Details |
|
SI3900DV-T1-GE3
MOSFET 2N-CH 20V 2A 6-TSOP
Vishay Siliconix
|
7,550 | 1.02000 | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 2A | 125mOhm @ 2.4A, 4.5V | 1.5V @ 250µA | 4nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP | Details |
|
FDD3510H
MOSFET N/P-CH 80V 4.3/2.8A TO252
onsemi
|
2,911 | 1.25000 | Obsolete | N and P-Channel, Common Drain | Logic Level Gate | 80V | 4.3A, 2.8A | 80mOhm @ 4.3A, 10V | 4V @ 250µA | 18nC @ 10V | 800pF @ 40V | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252 (DPAK) | Details |
|
ALD114804ASCL
MOSFET 4N-CH 10.6V 16SOIC
Advanced Linear Devices Inc.
|
2,577 | 6.58460 | Active | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC | Details |
|
BSO211PHXUMA1
MOSFET 2P-CH 20V 4A 8DSO
Infineon Technologies
|
27,500 | 0.31000 | Obsolete | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 67mOhm @ 4.6A, 4.5V | 1.2V @ 25µA | 10nC @ 4.5V | 1095pF @ 15V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 | Details |
|
ALD212900APAL
MOSFET 2N-CH 10.6V 0.08A 8DIP
Advanced Linear Devices Inc.
|
8,986 | 6.94000 | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 10mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
AUIRF7309QTR
MOSFET N/P-CH 30V 4A/3A 8SO
Infineon Technologies
|
4,864 | 2.63000 | Active | N and P-Channel | Logic Level Gate | 30V | 4A, 3A | 50mOhm @ 2.4A, 10V | 3V @ 250µA | 25nC @ 4.5V | 520pF @ 15V | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
MSCSM120HM31CT3AG
PM-MOSFET-SIC-SBD~-SP3F
Microchip Technology
|
5 | 285.97000 | Active | 4 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | Details |
|
DMC2038LVT-7
MOSFET N/P-CH 20V TSOT26
Diodes Incorporated
|
1,141 | 0.46000 | Not For New Designs | N and P-Channel | Logic Level Gate | 20V | 3.7A, 2.6A | 35mOhm @ 4A, 4.5V | 1V @ 250µA | 17nC @ 10V | 530pF @ 10V | 800mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 | Details |
|
IRF7341GTRPBF
MOSFET N-CH 55V 5.1A
Infineon Technologies
|
2,917 | 2.14000 | Active | 2 N-Channel (Dual) | Standard | 55V | 5.1A | 50mOhm @ 5.1A, 10V | 1V @ 250µA (Min) | 44nC @ 10V | 780pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
NVMFD5C674NLT1G
MOSFET 2N-CH 60V 42A S08FL
onsemi
|
6,449 | 2.10000 | Active | 2 N-Channel (Dual) | Standard | 60V | 11A (Ta), 42A (Tc) | 14.4mOhm @ 10A, 10V | 2.2V @ 25µA | 4.7nC @ 4.5V | 640pF @ 25V | 3W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | Details |
|
DMC2025UFDB-7
MOSFET BVDSS: 8V-24V U-DFN2020-6
Diodes Incorporated
|
5,535 | 0.13720 | Active | N and P-Channel Complementary | Standard | 20V | 6A (Ta), 3.5A (Ta) | 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V | 1V @ 250µA, 1.4V @ 250µA | 12.3nC @ 10V, 15nC @ 8V | 486pF @ 10V, 642pF @ 10V | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) | Details |
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