| Mfr Part # | Qty | Price | Product Status | Driven Configuration | Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISL6615AIBZ
IC GATE DRVR HALF-BRIDGE 8SOIC
Renesas Electronics America Inc
|
19 | 4.55000 | Last Time Buy | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 6.8V ~ 13.2V | - | 2.5A, 4A | Non-Inverting | 36 V | 13ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
MD1812K6-G
IC GATE DRVR HALF-BRIDGE 16QFN
Microchip Technology
|
8,400 | 3.37500 | Active | Half-Bridge | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5V ~ 13V | 0.3V, 1.7V | 2A, 2A | Non-Inverting | - | 6ns, 6ns | -25°C ~ 125°C (TA) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) | Details |
|
UC2714D
IC GATE DRVR LOW-SIDE 8SOIC
Texas Instruments
|
820 | 2.15000 | Active | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 7V ~ 20V | 0.8V, 2V | 500mA, 1A | Non-Inverting | - | 30ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
IR2111SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
Infineon Technologies
|
1,659 | 3.28000 | Active | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8.3V, 12.6V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
IRS2103STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
Infineon Technologies
|
7,325 | 1.45000 | Active | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600 V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
UCC27323DGN
IC GATE DRVR LOW-SIDE 8MSOP
Texas Instruments
|
178 | 2.44000 | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 15V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-HVSSOP | Details |
|
IR4426PBF
IC GATE DRVR LOW-SIDE 8DIP
Infineon Technologies
|
12,507 | 1.54000 | Active | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 6V ~ 20V | 0.8V, 2.7V | 2.3A, 3.3A | Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
NCP5111DR2G
IC GATE DRVR HALF-BRIDGE 8SOIC
onsemi
|
5,418 | 1.41000 | Active | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.3V | 250mA, 500mA | Non-Inverting | 600 V | 85ns, 35ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
MIC4224YM-TR
IC GATE DRVR LOW-SIDE 8SOIC
Microchip Technology
|
1 | 2.79000 | Active | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 4A, 4A | Non-Inverting | - | 15ns, 15ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
IXDI609CI
IC GATE DRVR LOW-SIDE TO220-5
IXYS Integrated Circuits Division
|
1,115 | 3.94000 | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | Details |
|
MC33152VDR2G
IC GATE DRVR LOW-SIDE 8SOIC
onsemi
|
2,369 | 1.62000 | Active | Low-Side | Independent | 2 | N-Channel MOSFET | 6.1V ~ 18V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
LMG1025QDEERQ1
LOW-SIDE GAN DRIVER AUTO 5V 5/7A
Texas Instruments
|
4,625 | 6.00000 | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.75V ~ 5.25V | 1.8V, 1.7V | 7A, 5A | Inverting, Non-Inverting | - | - | -40°C ~ 125°C (TJ) | Surface Mount, Wettable Flank | 6-WDFN Exposed Pad | 6-WSON (2x2) | Details |
|
NCP81080DR2G
IC GATE DRVR HALF-BRIDGE 8SOIC
onsemi
|
1,869 | 1.61000 | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5.5V ~ 20V | 1.2V, 1.8V | 500mA, 800mA | TTL | - | 19ns, 17ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
IR2135JTRPBF
IC GATE DRVR HALF-BRIDGE 44PLCC
Infineon Technologies
|
135 | 13.58000 | Active | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600 V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) | Details |
|
MCP14A0452-E/SN
IC GATE DRVR LOW-SIDE 8SOIC
Microchip Technology
|
582 | 1.43000 | Active | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 4.5A, 4.5A | Non-Inverting | - | 9.5ns, 9ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
IGD515EI
IC GATE DRVR HI/LOW SIDE MODULE
Power Integrations
|
8,409 | 187.82000 | Not For New Designs | High-Side or Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 12V ~ 16V | 0.9V, 3.8V | 15A, 15A | - | - | 40ns, 40ns | -40°C ~ 85°C (TA) | Through Hole | Module | Module | Details |
|
LT1162ISW#TRPBF
IC GATE DRVR HALF-BRIDGE 24SOIC
Analog Devices Inc.
|
6,207 | 9.75000 | Active | Half-Bridge | Independent | 4 | N-Channel MOSFET | 10V ~ 15V | 0.8V, 2V | 1.5A, 1.5A | Non-Inverting | 60 V | 130ns, 60ns | -40°C ~ 125°C (TJ) | Surface Mount | 24-SOIC (0.295", 7.50mm Width) | 24-SOIC | Details |
|
MCP14A0901T-E/SN
IC GATE DRVR HI/LOW SIDE 8SOIC
Microchip Technology
|
4,708 | 1.44000 | Active | High-Side or Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 9A, 9A | Inverting | - | 22ns, 22ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
DGD2003S8-13
IC GATE DRVR HALF-BRIDGE 8SO
Diodes Incorporated
|
1,818 | 0.94000 | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 200 V | 70ns, 35ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO Type TH | Details |
|
IXDI614SI
IC GATE DRVR LOW-SIDE 8SOIC
IXYS Integrated Circuits Division
|
4,120 | 4.93000 | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP | Details |
|
MCP14A0902T-E/MNY
IC GATE DRVR HI/LOW SIDE 8TDFN
Microchip Technology
|
5,646 | 1.54500 | Active | High-Side or Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 9A, 9A | Non-Inverting | - | 22ns, 22ns | -40°C ~ 125°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Details |
|
LTC1982ES6#TRPBF
IC GATE DRVR HIGH-SIDE SOT23-6
Analog Devices Inc.
|
7,231 | 4.75000 | Active | High-Side | Independent | 2 | N-Channel MOSFET | 1.8V ~ 5.5V | 0.6V, 1.4V | - | Inverting | - | - | -40°C ~ 85°C (TA) | Surface Mount | SOT-23-6 | TSOT-23-6 | Details |
|
TC4432EPA
IC GATE DRV HI-SIDE/LO-SIDE 8DIP
Microchip Technology
|
5,625 | 4.19000 | Active | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 30V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
TC4428AMJA
IC GATE DRVR LOW-SIDE 8CERDIP
Microchip Technology
|
3,740 | 34.20630 | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | -55°C ~ 125°C (TA) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP | Details |
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