| Mfr Part # | Qty | Price | Product Status | Driven Configuration | Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXDI602D2TR
IC GATE DRVR LOW-SIDE 8DFN
IXYS Integrated Circuits Division
|
1,542 | 1.71000 | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Details |
|
IRS21271STRPBF
IC GATE DRVR HIGH-SIDE 8SOIC
Infineon Technologies
|
5,105 | 2.04000 | Active | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 9V ~ 20V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
MCP14E11-E/P
IC GATE DRVR LOW-SIDE 8DIP
Microchip Technology
|
58 | 2.57000 | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
UCC27425P
IC GATE DRVR LOW-SIDE 8DIP
Texas Instruments
|
3,709 | 2.16000 | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4V ~ 15V | 1V, 2V | 4A, 4A | Inverting, Non-Inverting | - | 20ns, 15ns | -40°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
LM5101CMA/NOPB
IC GATE DRVR HALF-BRIDGE 8SOIC
Texas Instruments
|
6,107 | 4.45000 | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9V ~ 14V | 2.3V, - | 1A, 1A | Non-Inverting | 118 V | 990ns, 715ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
MIC5020YM-TR
IC GATE DRVR LOW-SIDE 8SOIC
Microchip Technology
|
4,976 | 3.31000 | Active | Low-Side | Single | 1 | N-Channel MOSFET | 11V ~ 50V | 0.8V, 2V | - | Non-Inverting | - | 700ns, 500ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
IR2304PBF
IC GATE DRVR HALF-BRIDGE 8DIP
Infineon Technologies
|
2,336 | 3.18000 | Discontinued at Digi-Key | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.3V | 60mA, 130mA | Non-Inverting | 600 V | 200ns, 100ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | Details |
|
TC4468COE713
IC GATE DRVR LOW-SIDE 16SOIC
Microchip Technology
|
1,252 | 5.33000 | Active | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.2A, 1.2A | Non-Inverting | - | 15ns, 15ns | 0°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC | Details |
|
IXDI630MYI
IC GATE DRVR LOW-SIDE TO263-5
IXYS Integrated Circuits Division
|
3,242 | 6.83160 | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 9V ~ 35V | 0.8V, 3.5V | 30A, 30A | Inverting | - | 11ns, 11ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 | Details |
|
ISL2111AR4Z-T
IC GATE DRVR HALF-BRIDGE 12DFN
Renesas Electronics America Inc
|
1,619 | 3.35670 | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8V ~ 14V | 1.4V, 2.2V | 3A, 4A | Non-Inverting | 114 V | 9ns, 7.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Details |
|
UCD7232RTJR
IC GATE DRVR HALF-BRIDGE 20QFN
Texas Instruments
|
5,213 | 0.84480 | Active | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.7V ~ 15V | 0.8V, 2V | 4A, 4A | Non-Inverting | - | 27ns, 21ns | -40°C ~ 125°C (TJ) | Surface Mount | 20-WFQFN Exposed Pad | 20-QFN (4x4) | Details |
|
MCP14E3-E/MF
IC GATE DRVR LOW-SIDE 8DFN
Microchip Technology
|
198 | 2.54000 | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 4A, 4A | Inverting | - | 15ns, 18ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Details |
|
TCK422G,L3F
LOAD SWITCH (GATE DRIVER) IC WCS
Toshiba Semiconductor and Storage
|
9,860 | 0.87000 | Active | High-Side | Single | 1 | N-Channel MOSFET | 2.7V ~ 28V | 0.4V, 1.2V | - | Non-Inverting | - | - | -40°C ~ 85°C | Surface Mount | 6-XFBGA, WLCSP | 6-WCSPG (0.8x1.2) | Details |
|
NCP81158DMNTXG
IC GATE DRVR HALF-BRIDGE 8DFN
onsemi
|
7,836 | 0.23060 | Active | Half-Bridge | Synchronous | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 5.5V | 0.6V, 3.3V | - | Non-Inverting | - | 16ns, 11ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-DFN (3x3) | Details |
|
LT1160IS#TRPBF
IC GATE DRVR HALF-BRIDGE 14SOIC
Analog Devices Inc.
|
7,778 | 5.76000 | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10V ~ 15V | 0.8V, 2V | 1.5A, 1.5A | Non-Inverting | 60 V | 130ns, 60ns | -40°C ~ 125°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SO | Details |
|
DGD2190S8-13
IC GATE DRVR HALF-BRIDGE 8SO
Diodes Incorporated
|
9,425 | 0.88500 | Not For New Designs | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600 V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | Details |
|
HIP2104FRAANZ-T
IC GATE DRVR HALF-BRIDGE 12DFN
Renesas Electronics America Inc
|
4,903 | 1.73680 | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5V ~ 14V | 1.63V, 2.06V | 1A, 1A | Non-Inverting | 60 V | 8ns, 2ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Details |
|
MIC44F19YMME
IC GATE DRVR LOW-SIDE 8MSOP
Microchip Technology
|
8,309 | 1.38000 | Active | Low-Side | Single | 1 | P-Channel MOSFET | 4.5V ~ 13.2V | 1.607V, 1.615V | 6A, 6A | Inverting | - | 10ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP | Details |
|
IXDN614PI
IC GATE DRVR LOW-SIDE 8DIP
IXYS Integrated Circuits Division
|
298 | 2.88000 | Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 35V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | Details |
|
MCP14E8-E/MF
IC GATE DRVR LOW-SIDE 8DFN
Microchip Technology
|
3,794 | 2.04000 | Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Inverting, Non-Inverting | - | 12ns, 15ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) | Details |
|
UC3714DTR
IC GATE DRVR LOW-SIDE 8SOIC
Texas Instruments
|
39,670 | 1.08000 | Obsolete | Low-Side | Synchronous | 2 | N-Channel, P-Channel MOSFET | 7V ~ 20V | 0.8V, 2V | 500mA, 1A | Non-Inverting | - | 30ns, 25ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | Details |
|
IR2112PBF
IC GATE DRVR HI/LOW SIDE 14DIP
Infineon Technologies
|
1,754 | 5.91000 | Not For New Designs | High-Side or Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600 V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP | Details |
|
MIC4427YMM-TR
IC GATE DRVR LOW-SIDE 8MSOP
Microchip Technology
|
445 | 1.45000 | Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP | Details |
|
UCC27282QDRCRQ1
AUTOMOTIVE 3-A, 120-V HALF BRIDG
Texas Instruments
|
1,970 | 2.56000 | Active | Half-Bridge | Independent | 2 | N-Channel MOSFET | 5.5V ~ 16V | 1.3V, 1.9V | 2.5A, 3.5A | Non-Inverting | - | 12ns, 10ns | -40°C ~ 125°C | Surface Mount | 10-VFDFN Exposed Pad | 10-VSON (3x3) | Details |
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