| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RURP1570
RECTIFIER DIODE
Harris Corporation
|
956 | 0.97000 | Active | Avalanche | 700 V | 15A | 1.8 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 100 µA @ 700 V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C | Details |
|
BAS81-GS08
DIODE SCHOTTKY 40V 30MA SOD80
Vishay General Semiconductor - Diodes Division
|
9,863 | 0.38000 | Active | Schottky | 40 V | 30mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 40 V | 1.6pF @ 1V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) | Details |
|
HU20260
DIODE GEN PURP 600V 200A HALFPAK
Microsemi Corporation
|
3 | 79.30000 | Obsolete | Standard | 600 V | 200A | 1.35 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 50 µA @ 600 V | - | Chassis Mount | HALF-PAK | HALF-PAK | - | Details |
|
FML-G22S
DIODE GEN PURP 200V 10A TO220F
Sanken
|
342 | 0.79000 | Obsolete | Standard | 200 V | 10A | 980 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 200 µA @ 200 V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -40°C ~ 150°C | Details |
|
GP15M-E3/73
DIODE GEN PURP 1KV 1.5A DO204
Vishay General Semiconductor - Diodes Division
|
2 | 0.41000 | Active | Standard | 1000 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 3.5 µs | 5 µA @ 1000 V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C | Details |
|
STTH802G-TR
DIODE GEN PURP 200V 8A D2PAK
STMicroelectronics
|
3,753 | 1.86000 | Active | Standard | 200 V | 8A | 1.05 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 6 µA @ 200 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) | Details |
|
STTH6006W
DIODE GEN PURP 600V 60A DO247
STMicroelectronics
|
850 | 5.80000 | Active | Standard | 600 V | 60A | 1.85 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 50 µA @ 600 V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) | Details |
|
ZHCS350TA
DIODE SCHOTTKY 40V 350MA SOD523
Diodes Incorporated
|
70,019 | 0.43000 | Active | Schottky | 40 V | 350mA (DC) | 810 mV @ 350 mA | Fast Recovery =< 500ns, > 200mA (Io) | 1.6 ns | 12 µA @ 30 V | 6pF @ 25V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | 125°C (Max) | Details |
|
STPSC10H065DLF
DIODES AND RECTIFIERS
STMicroelectronics
|
3,111 | 4.12000 | Active | Silicon Carbide Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 595pF @ 0V, 1MHz | Surface Mount | 8-PowerVDFN | PowerFlat™ (8x8) HV | -40°C ~ 175°C | Details |
|
SS5P10HM3_A/I
DIODE SCHOTTKY 100V 5A TO277A
Vishay General Semiconductor - Diodes Division
|
4,848 | 0.62000 | Active | Schottky | 100 V | 5A | 880 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15 µA @ 100 V | 130pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C | Details |
|
B330LA-M3/5AT
DIODE SCHOTTKY 30V 3A DO214AC
Vishay General Semiconductor - Diodes Division
|
3,678 | 0.16830 | Active | Schottky | 30 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C | Details |
|
SK310HE3-TP
SCHOTTKY BARRIER RECTIFIERS 100V
Micro Commercial Co
|
9,772 | 0.58000 | Active | Schottky | 100 V | 3A (DC) | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 150°C | Details |
|
BAS19-G3-08
DIODE GEN PURP 100V 200MA SOT23
Vishay General Semiconductor - Diodes Division
|
3,314 | 0.03670 | Active | Standard | 100 V | 200mA | 1.25 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 100 V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -55°C ~ 150°C | Details |
|
BAW56/LF1235
RECTIFIER DIODE
NXP USA Inc.
|
98,000 | 0.02000 | Active | - | - | - | - | - | - | - | - | - | - | - | - | Details |
|
NTE6059
R-300 PRV 70A ANODE CASE
NTE Electronics, Inc
|
20 | 13.99000 | Active | Standard | 300 V | 70A | 1.25 V @ 20 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 mA @ 300 V | - | Stud Mount | DO-203AA, DO-5, Stud | DO-5 | -65°C ~ 190°C | Details |
|
SVM1560U_R1_00001
EXTREME LOW VF SCHOTTKY RECTIFIE
Panjit International Inc.
|
7,800 | 0.78000 | Active | Schottky | 60 V | 15A | 560 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 320 µA @ 60 V | 850pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277 | -55°C ~ 150°C | Details |
|
UPS340/TR13
DIODE SCHOTTKY 40V 3A POWERMITE
Microchip Technology
|
9,774 | 1.38000 | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | 180pF @ 4V, 1MHz | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C | Details |
|
GIB1402HE3_A/I
DIODE GEN PURP 100V 8A TO263AB
Vishay General Semiconductor - Diodes Division
|
5,404 | 0.82500 | Active | Standard | 100 V | 8A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 150°C | Details |
|
FFSD0865B
650V 8A SIC SBD GEN1.5
onsemi
|
2,487 | 3.64000 | Active | Silicon Carbide Schottky | 650 V | 11.6A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 336pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C | Details |
|
RA356-CT
CUT-TAPE VERSION. STANDARD RECO
Diotec Semiconductor
|
3,785 | 4.55890 | Active | Standard | 600 V | 35A | 1.1 V @ 80 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 600 V | - | Surface Mount | RA | RA | -50°C ~ 175°C | Details |
|
65SPB015A
DIODE SCHOTTKY 15V 60A SPD-2A
SMC Diode Solutions
|
2,007 | 7.92260 | Active | Schottky | 15 V | 60A | 410 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 mA @ 15 V | 3600pF @ 5V, 1MHz | Surface Mount | SPD-2A | SPD-2A | -55°C ~ 125°C | Details |
|
MURS140-M3/52T
DIODE GEN PURP 400V 1A DO214AA
Vishay General Semiconductor - Diodes Division
|
2,637 | 0.13230 | Active | Standard | 400 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 400 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C | Details |
|
BAL99
RECTIFIER DIODE, 0.215A, 70VAB
Infineon Technologies
|
66,000 | 0.03000 | Active | Standard | 80 V | 250mA (DC) | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 70 V | 1.5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT23-3 (TO-236) | 150°C (Max) | Details |
|
PMEG3030EP-QX
SCHOTTKYS IN CFP PACKAGES
Nexperia USA Inc.
|
8,546 | 0.18770 | Active | Schottky | 30 V | 3A | 360 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 30 V | 470pF @ 1V, 1MHz | Surface Mount | SOD-128 | SOD-128/CFP5 | 150°C | Details |
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