Diodes - Rectifiers - Single

Mfr Part #	Qty	Price	Product Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
S1BB DIODE GEN PURP 100V 1A SMB SMC Diode Solutions	18,706	0.36000	Active	Standard	100 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	5 µA @ 100 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-65°C ~ 175°C	Details
1N2278R DO5 40 AMP SILICON RECTFIER Solid State Inc.	5,119	2.50000	Active	Standard, Reverse Polarity	600 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C	Details
SF28G DIODE GEN PURP 600V 2A DO15 SMC Diode Solutions	14,890	0.39000	Active	Standard	600 V	2A	1.7 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	30pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C	Details
FS2G-LTP DIODE 2A 400V HSMA DO-214AC Micro Commercial Co	9,139	0.05940	Active	Standard	400 V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 150°C	Details
BYT56M-TAP DIODE AVALANCHE 1KV 3A SOD64 Vishay General Semiconductor - Diodes Division	597	1.20000	Active	Avalanche	1000 V	3A	1.4 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	5 µA @ 1000 V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C	Details
1N3177R DO9 240 AMP SILICON RECTIFIER Solid State Inc.	3,276	21.00000	Active	Standard, Reverse Polarity	50 V	240A	1.25 V @ 240 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 1600 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-9	-65°C ~ 200°C	Details
SL1M-AQ DIODE STD SOD-123FL 1000V 1A Diotec Semiconductor	3,000	0.04380	Active	Standard	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1 µs	1 µA @ 1000 V	-	Surface Mount	SOD-123F	SOD-123F (SMF)	-50°C ~ 150°C	Details
JANTX1N6625US/TR RECTIFIER UFR,FRR Microchip Technology	5,631	13.63500	Active	Standard	1.1 V	1A	1.75 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	500 nA @ 1.1 V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C	Details
CDBF0520-HF DIODE SCHOTTKY 20V 500MA 1005 Comchip Technology	3,177	0.07000	Active	Schottky	20 V	500mA	470 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	100pF @ 0V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)	Details
VS-T110HF10 DIODE GEN PURP 100V 110A D-55 Vishay General Semiconductor - Diodes Division	9,267	32.10800	Active	Standard	100 V	110A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 100 V	-	Chassis Mount	D-55 T-Module	D-55	-	Details
S1MF_R1_00001 SURFACE MOUNT SUPER FAST RECOVER Panjit International Inc.	3,573	0.31000	Active	Standard	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	9pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C	Details
TPUH6J S1G DIODE GEN PURP 600V 6A TO277A Taiwan Semiconductor Corporation	17,890	1.65000	Active	Standard	600 V	6A	3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 600 V	50pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C	Details
VS-15EVU06-M3/I DIODE GEN PURPOSE 600V SLIMDPAK Vishay General Semiconductor - Diodes Division	4,086	1.26000	Active	Standard	600 V	15A	1.8 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	20 µA @ 600 V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-55°C ~ 175°C	Details
S3M DIODE GEN PURP 1KV 3A SMC onsemi	587,889	0.45000	Active	Standard	1000 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	5 µA @ 1000 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C	Details
16FR10 16 AMP SILCON RECTIFIER DO4 AK Solid State Inc.	3,868	1.66700	Active	Standard	100 V	16A	1.2 V @ 16 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C	Details
EGL34B DIODE SFR DO-213AA 100V 0.5A Diotec Semiconductor	2,500	0.04860	Active	Standard	100 V	500mA	1.25 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 100 V	-	Surface Mount	DO-213AA	DO-213AA, MINI-MELF	-50°C ~ 175°C	Details
AU2PM-M3/87A DIODE AVALANCHE 1KV 1.3A TO277 Vishay General Semiconductor - Diodes Division	4,643	0.33000	Active	Avalanche	1000 V	1.3A (DC)	2.5 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 1000 V	29pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C	Details
FR202G DIODE GPP 100V 2A DO15 SMC Diode Solutions	9,204	0.07410	Active	Standard	100 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 70 V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C	Details
VS-SD400N20PC DIODE GEN PURP 2KV 400A DO205 Vishay General Semiconductor - Diodes Division	9,442	110.13000	Active	Standard	2000 V	400A	1.62 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	-	15 mA @ 2000 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-40°C ~ 190°C	Details
FFSP3065B-F085 SIC DIODE 650V onsemi	4,192	5.54020	Active	Silicon Carbide Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C	Details
UPS160/TR7 DIODE SCHOTTKY 60V 1A POWERMITE Microchip Technology	8,990	0.54000	Active	Schottky	60 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	55pF @ 4V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C	Details
SDT5100LP5-7 DIODE SCHOTTKY 100V 5A POWERDI 5 Diodes Incorporated	7,277	0.17540	Active	Schottky	100 V	5A	820 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	4 µA @ 100 V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-55°C ~ 150°C	Details
FR153G DIODE GPP 200V 1.5A DO15 SMC Diode Solutions	6,691	0.06630	Active	Standard	200 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 140 V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C	Details
1N5188US/TR RECTIFIER UFR,FRR Microchip Technology	5,289	9.07500	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	2 µA @ 400 V	-	Through Hole	B, Axial	-	-65°C ~ 175°C	Details

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