| Mfr Part # | Qty | Price | Product Status | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RS1PBHM3_A/H
DIODE 100V 1A DO-220AA
Vishay General Semiconductor - Diodes Division
|
6,647 | 0.10020 | Active | Standard | 100 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 100 V | 9pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C | Details |
|
RS1JHE3_A/H
DIODE GEN PURP 600V 1A DO214AC
Vishay General Semiconductor - Diodes Division
|
7,200 | 0.51000 | Active | Standard | 600 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 600 V | 7pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C | Details |
|
RL 2ZV1
DIODE GEN PURP 200V 2A AXIAL
Sanken
|
4,549 | 0.64000 | Obsolete | Standard | 200 V | 2A | 980 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 50 µA @ 200 V | - | Through Hole | Axial | - | -40°C ~ 150°C | Details |
|
CMSH3-40M TR13 PBFREE
DIODE SCHOTTKY 40V 3A SMB
Central Semiconductor Corp
|
5,757 | 0.65000 | Active | Schottky | 40 V | 3A | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | 280pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C | Details |
|
CDBC220LR-HF
DIODE SCHOTTKY 20V 2A DO214AB
Comchip Technology
|
3,506 | 0.20620 | Active | Schottky | 20 V | 2A | 400 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 150°C | Details |
|
1N4002E-E3/54
DIODE GEN PURP 100V 1A DO204AL
Vishay General Semiconductor - Diodes Division
|
1,769 | 0.09890 | Active | Standard | 100 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C | Details |
|
1N4448WQ-7-F
DIODE GEN PURP 75V 250MA SOD123
Diodes Incorporated
|
7,383 | 0.24000 | Active | Standard | 75 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 25 nA @ 20 V | 4pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 150°C | Details |
|
20FR20
20 AMP SILCON RECTIFIER DO4 AK
Solid State Inc.
|
5,301 | 1.86700 | Active | Standard, Reverse Polarity | 200 V | 20A | 1.2 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C | Details |
|
60HFR140
DO5 60 AMP SILICON RECTFIER AK
Solid State Inc.
|
8,379 | 2.46700 | Active | Standard | 1400 V | 60A | 1.3 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 200 µA @ 1400 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C | Details |
|
SD103BW-HE3-18
DIODE SCHOTTKY 350MA 30V SOD123
Vishay General Semiconductor - Diodes Division
|
9,682 | 0.40000 | Active | Schottky | 30 V | 350mA (DC) | 600 mV @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 10 ns | 5 µA @ 20 V | 50pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 125°C | Details |
|
ES1BE-TP
DIODE GEN PURP 100V 1A DO214AC
Micro Commercial Co
|
6,000 | 0.47000 | Discontinued at Digi-Key | Standard | 100 V | 1A | 975 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMAE) | -50°C ~ 150°C | Details |
|
NTE6020
R-50 PRV 60A CATH CASE
NTE Electronics, Inc
|
25 | 10.57000 | Active | Standard | 40 V | 60A | 1.4 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 mA @ 40 V | - | Stud Mount | DO-203AA, DO-5, Stud | DO-5 | -65°C ~ 175°C | Details |
|
A1N4007G-G
DIODE GEN PURP 1KV 1A DO41
Comchip Technology
|
2,999 | 0.34000 | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 125°C | Details |
|
NXPSC06650X6Q
DIODE SCHOTTKY 650V 6A TO220F
WeEn Semiconductors
|
2,997 | 3.90000 | Active | Silicon Carbide Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) | Details |
|
RS1GAL
150NS, 1A, 400V, FAST RECOVERY R
Taiwan Semiconductor Corporation
|
7,000 | 0.49000 | Active | Standard | 400 V | 1A (DC) | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | 7pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | Thin SMA | -55°C ~ 150°C | Details |
|
SS1040L_R1_00001
SOD-123, SKY
Panjit International Inc.
|
30,425 | 0.39000 | Active | Schottky | 40 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 220 µA @ 40 V | 50pF @ 4V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 125°C | Details |
|
1N3294RA
DO8 150 AMP SILICON RECTIFIER
Solid State Inc.
|
50 | 15.50000 | Active | Standard, Reverse Polarity | 800 V | 150A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 800 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-8 | -65°C ~ 200°C | Details |
|
C3D08065I
DIODE SCHOTTKY 650V 8A TO220-2
Wolfspeed, Inc.
|
6,012 | 5.70000 | Active | Silicon Carbide Schottky | 650 V | 16.5A (DC) | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 441pF @ 0V, 1MHz | Through Hole | TO-220-2 Isolated Tab | TO-220-2 Isolated Tab | -55°C ~ 175°C | Details |
|
JANS1N3595-1
DIODE GEN PURP 125V 200MA DO35
Microchip Technology
|
1,098 | 50.17500 | Active | Standard | 125 V | 200mA (DC) | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C | Details |
|
STPS560SFY
AUTOMOTIVE 60 V 5 A LOW DROP LOW
STMicroelectronics
|
6,000 | 0.86000 | Active | Schottky | 60 V | 5A | 560 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C | Details |
|
FR601GP-TP
DIODE GPP FAST 6A R-6
Micro Commercial Co
|
1,493 | 0.62700 | Active | Standard | 50 V | 6A | - | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | 150pF @ 4V, 1MHz | Through Hole | R-6, Axial | R-6 | -55°C ~ 150°C | Details |
|
S16Q
DIODE GEN PURP 1.2KV 16A DO203AA
GeneSiC Semiconductor
|
8,006 | 4.59000 | Active | Standard | 1200 V | 16A | 1.1 V @ 16 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C | Details |
|
HSM835JE3/TR13
DIODE SCHOTTKY 35V 8A DO214AB
Microchip Technology
|
4,000 | 1.15500 | Active | Schottky | 35 V | 8A | 620 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 35 V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C | Details |
|
SS8P3LHM3_A/I
DIODE SCHOTTKY 30V 8A TO277A
Vishay General Semiconductor - Diodes Division
|
3,728 | 0.66000 | Active | Schottky | 30 V | 8A | 570 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | 330pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C | Details |
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