IC DRAM 256MBIT PAR 54TSOP II
W9825G6KH-6 TR is a Memory manufactured by Winbond Electronics. IC DRAM 256MBIT PAR 54TSOP II. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TSOP (0.400", 10.16mm Width).
In Stock: 9,362
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AS4C8M16SA-6BANTR | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 54TFBGA | 100% | View |
| AS4C8M16SA-6BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 54TFBGA | 100% | View |
| W9812G6JB-6I | Winbond Electronics | IC DRAM 128MBIT PARALLEL 54TFBGA | 100% | View |
| W9825G6JB-6I TR | Winbond Electronics | 256MB SDR SDRAM X16, 166MHZ, IND | 100% | View |
| IS43LR16640A-6BL-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 92% | View |
| MT46H32M32LFB5-5 AAT:B TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 90VFBGA | 83% | View |
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