IC DRAM 128MBIT PARALLEL 54TFBGA
AS4C8M16SA-6BIN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 128MBIT PARALLEL 54TFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3V ~ 3.6V, package / case 54-TFBGA.
In Stock: 2,172
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-TFBGA (8x8) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AS4C8M16SA-6BANTR | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 54TFBGA | 100% | View |
| W9812G6JB-6I | Winbond Electronics | IC DRAM 128MBIT PARALLEL 54TFBGA | 100% | View |
| W9825G6JB-6I TR | Winbond Electronics | 256MB SDR SDRAM X16, 166MHZ, IND | 100% | View |
| MT46H32M32LFB5-5 AAT:B TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 90VFBGA | 83% | View |
| MT46H16M32LFBQ-5 AAT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 83% | View |
| 71V3558SA100BQGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PAR 165CABGA | 74% | View |
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