IC DRAM 256MBIT PARALLEL 90TFBGA
W9825G2JB-6 is a Memory manufactured by Winbond Electronics. IC DRAM 256MBIT PARALLEL 90TFBGA. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3V ~ 3.6V, package / case 90-TFBGA.
In Stock: 8,202
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-TFBGA (8x13) |
W9825G2JB-6 is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W9864G6JT-6 TR | Winbond Electronics | 64MB SDR SDRAM X16, 166MHZ | 100% | View |
| 0418A4ACLAA-5 | IBM | 4MBIT (256K X 18) SRAM | 99% | View |
| W989D2DBJX6I TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 90VFBGA | 92% | View |
| MT46H8M32LFB5-6 IT:A TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 90VFBGA | 92% | View |
| IS43LR32640A-5BL | ISSI, Integrated Silicon Solution Inc | IC DRAM 2GBIT PARALLEL 90WBGA | 83% | View |
| 71V3556S100PFG8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 74% | View |
Submit your RFQ for W9825G2JB-6 and get a quote within 24 hours.
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