IC DRAM 128MBIT PARALLEL 90TFBGA
W9812G2KB-6I is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 90TFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3V ~ 3.6V, package / case 90-TFBGA.
In Stock: 6,039
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mb (4M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-TFBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT48H32M16LFB4-6 IT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 54VFBGA | 92% | View |
| MT46H32M32LFB5-5 IT:B | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 90VFBGA | 83% | View |
| AS4C64M32MD1A-5BIN | Alliance Memory, Inc. | 2G - A DIE 64M X 32 1.8V INDUSTR | 83% | View |
| MT46H64M32LFBQ-48 IT:C | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 90VFBGA | 81% | View |
| MT46H64M32LFBQ-48 IT:C TR | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 90VFBGA | 81% | View |
| 71V65603S100BGI8 | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 119PBGA | 74% | View |
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