2G - A DIE 64M X 32 1.8V INDUSTR
AS4C64M32MD1A-5BIN is a Memory manufactured by Alliance Memory, Inc.. 2G - A DIE 64M X 32 1.8V INDUSTR. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 90-VFBGA.
In Stock: 240
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | - |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 90-VFBGA |
| Supplier Device Package | 90-FBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H64M32LFBQ-48 IT:C | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 90VFBGA | 98% | View |
| MT46H64M32LFBQ-48 IT:C TR | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 90VFBGA | 98% | View |
| MT48H32M16LFB4-6 IT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 54VFBGA | 92% | View |
| W9812G2KB-6I TR | Winbond Electronics | IC DRAM 128MBIT PARALLEL 90TFBGA | 83% | View |
| W9812G2KB-6I | Winbond Electronics | IC DRAM 128MBIT PARALLEL 90TFBGA | 83% | View |
| 71V65603S100BGI8 | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 119PBGA | 57% | View |
Submit your RFQ for AS4C64M32MD1A-5BIN and get a quote within 24 hours.
3J LIMITED
