IC DRAM 512MBIT PARALLEL 60VFBGA
W949D6DBHX5E TR is a Memory manufactured by Winbond Electronics. IC DRAM 512MBIT PARALLEL 60VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 60-TFBGA.
In Stock: 2,605
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-VFBGA (8x9) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AS4C16M32MD1-5BCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | 100% | View |
| W947D6HBHX5E TR | Winbond Electronics | IC DRAM 128MBIT PARALLEL 60VFBGA | 100% | View |
| MT46H128M32L2KQ-5 IT:A | Micron Technology Inc. | IC DRAM 4GBIT PARALLEL 168WFBGA | 100% | View |
| AS4C16M32MD1B-5BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 90FBGA | 100% | View |
| MT46H64M32LFBQ-48 AIT:C | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 90VFBGA | 98% | View |
| W947D2HBJX6E | Winbond Electronics | IC DRAM 128MBIT PARALLEL 90VFBGA | 92% | View |
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