IC DRAM 512MBIT PARALLEL 90FBGA
AS4C16M32MD1-5BCNTR is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 512MBIT PARALLEL 90FBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TJ), voltage - supply 1.7V ~ 1.95V, package / case 90-VFBGA.
In Stock: 8,294
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 90-VFBGA |
| Supplier Device Package | 90-FBGA (8x13) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W949D6DBHX5E TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 60VFBGA | 100% | View |
| MT46H64M32LFBQ-48 AIT:C | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 90VFBGA | 98% | View |
| AS4C64M4SA-6TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | 83% | View |
| 71V65603S100BQI | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 165CABGA | 57% | View |
| 71V546S100PFGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 57% | View |
| 71V65803S100PFGI8 | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 100TQFP | 57% | View |
Submit your RFQ for AS4C16M32MD1-5BCNTR and get a quote within 24 hours.
3J LIMITED
