IC DRAM 128MBIT PARALLEL 60VFBGA
W947D6HBHX6E is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 60VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 60-TFBGA.
In Stock: 5,122
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-VFBGA (8x9) |
W947D6HBHX6E is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43LR16640A-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 100% | View |
| MT46H16M32LFB5-6 AIT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 100% | View |
| AS4C8M16SB-6TIN | Alliance Memory, Inc. | 128M - B DIE 8M X 16 3.3V INDUST | 97% | View |
| AS4C8M16SA-6TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | 91% | View |
| AS4C4M16SB-6TIN | Alliance Memory, Inc. | SDR, 64MB, 4M X 16, 3.3V, 54PIN | 91% | View |
| 71V2556S100PFGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100TQFP | 66% | View |
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