128M - B DIE 8M X 16 3.3V INDUST
AS4C8M16SB-6TIN is a Memory manufactured by Alliance Memory, Inc.. 128M - B DIE 8M X 16 3.3V INDUST. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), package / case 54-TSOP (0.400", 10.16mm Width).
In Stock: 108
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | - |
| Memory Interface | LVTTL |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 5 ns |
| Voltage - Supply | - |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| AS4C8M16SA-6TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | 100% | View |
| AS4C4M16SB-6TIN | Alliance Memory, Inc. | SDR, 64MB, 4M X 16, 3.3V, 54PIN | 100% | View |
| IS43LR16640A-6BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 1GBIT PARALLEL 60TWBGA | 97% | View |
| MT46H16M32LFB5-6 AIT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 97% | View |
| 71V2546S100BGI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100MHZ | 67% | View |
| 71V2546S100BGI8 | Renesas Electronics America Inc | IC SRAM 4.5MBIT PARALLEL 100MHZ | 67% | View |
Submit your RFQ for AS4C8M16SB-6TIN and get a quote within 24 hours.
3J LIMITED
