IC DRAM 128MBIT PARALLEL 60VFBGA
W947D6HBHX5I TR is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 60VFBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 60-TFBGA.
In Stock: 4,309
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 60-TFBGA |
| Supplier Device Package | 60-VFBGA (8x9) |
W947D6HBHX5I TR is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H16M32LFBQ-5 AAT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 100% | View |
| MT46H128M16LFDD-48 AIT:C TR | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 60VFBGA | 98% | View |
| AS4C8M16MSA-6BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 54FBGA | 91% | View |
| W9812G6KH-6I TR | Winbond Electronics | IC DRAM 128MBIT PAR 54TSOP II | 83% | View |
| 71V65803S100BGI8 | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 119PBGA | 57% | View |
| 71V3556SA100BQI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PAR 165CABGA | 57% | View |
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