IC DRAM 128MBIT PARALLEL 54FBGA
AS4C8M16MSA-6BIN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 128MBIT PARALLEL 54FBGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 54-VFBGA.
In Stock: 3,594
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-VFBGA |
| Supplier Device Package | 54-FBGA (8x8) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| MT46H32M32LFB5-6 IT:B TR | Micron Technology Inc. | IC DRAM 1GBIT PARALLEL 90VFBGA | 100% | View |
| W9812G6KH-6I TR | Winbond Electronics | IC DRAM 128MBIT PAR 54TSOP II | 92% | View |
| MT46H16M32LFBQ-5 AAT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 90VFBGA | 91% | View |
| MT46H128M16LFDD-48 AIT:C TR | Micron Technology Inc. | IC DRAM 2GBIT PARALLEL 60VFBGA | 89% | View |
| 71V65803S100BGI8 | Renesas Electronics America Inc | IC SRAM 9MBIT PARALLEL 119PBGA | 66% | View |
| 71V3556SA100BQI | Renesas Electronics America Inc | IC SRAM 4.5MBIT PAR 165CABGA | 66% | View |
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3J LIMITED
