IC DRAM 128MBIT PARALLEL 90VFBGA
W947D2HBJX5E TR is a Memory manufactured by Winbond Electronics. IC DRAM 128MBIT PARALLEL 90VFBGA. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 90-TFBGA.
In Stock: 7,757
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 128Mb (4M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
W947D2HBJX5E TR is Last Time Buy. Consider these compatible alternatives:
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W94AD6KBHX5I | Winbond Electronics | IC DRAM 1GBIT PARALLEL 60VFBGA | 100% | View |
| W949D2DBJX5E | Winbond Electronics | IC DRAM 512MBIT PARALLEL 90VFBGA | 100% | View |
| W989D6DBGX6E | Winbond Electronics | 512MB LPSDR, X16, 166MHZ, 46NM | 92% | View |
| W989D6DBGX6I TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 54VFBGA | 92% | View |
| IS42S16800F-5TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | 92% | View |
| AS4C16M16SA-6TANTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | 83% | View |
Submit your RFQ for W947D2HBJX5E TR and get a quote within 24 hours.
3J LIMITED
