512MB LPSDR, X16, 166MHZ, 46NM
W989D6DBGX6E is a Memory manufactured by Winbond Electronics. 512MB LPSDR, X16, 166MHZ, 46NM. Key specifications: mounting type Surface Mount, operating temperature -25°C ~ 85°C (TC), voltage - supply 1.7V ~ 1.95V, package / case 54-TFBGA.
In Stock: 5,984
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPSDR |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | LVCMOS |
| Clock Frequency | 166 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-VFBGA (8x9) |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| W989D6DBGX6I TR | Winbond Electronics | IC DRAM 512MBIT PARALLEL 54VFBGA | 100% | View |
| MT48H8M32LFB5-6 IT:H | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 90VFBGA | 100% | View |
| W949D2DBJX5E | Winbond Electronics | IC DRAM 512MBIT PARALLEL 90VFBGA | 92% | View |
| AS4C16M16SA-6TANTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | 91% | View |
| IS42S16800F-5TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | 83% | View |
| 70V3389S5BFI8 | Renesas Electronics America Inc | IC SRAM 1.125MBIT PAR 208CABGA | 81% | View |
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