128MB DDR SDRAM X16, 200MHZ, IND
W9412G6JB-5I TR is a Memory manufactured by Winbond Electronics. 128MB DDR SDRAM X16, 200MHZ, IND. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 2.3V, package / case 54-TFBGA.
In Stock: 1,166
| Attribute | Value |
|---|---|
| Product Status | Last Time Buy |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mb (8M x 16) |
| Memory Interface | LVTTL |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 700 ps |
| Voltage - Supply | 2.7V ~ 2.3V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-TFBGA (8x8) |
W9412G6JB-5I TR is Last Time Buy. Consider these compatible alternatives:
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|---|---|---|---|---|
| MT46V32M16CY-5B IT:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | 99% | View |
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| IS43R16800E-5TLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | 98% | View |
| IS43R86400E-5BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TFBGA | 98% | View |
| IS43R16320F-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TFBGA | 90% | View |
| IS43R86400E-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TFBGA | 90% | View |
Submit your RFQ for W9412G6JB-5I TR and get a quote within 24 hours.
3J LIMITED
