IC DRAM 512MBIT PAR 66TSOP II
AS4C64M8D1-5TIN is a Memory manufactured by Alliance Memory, Inc.. IC DRAM 512MBIT PAR 66TSOP II. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.3V ~ 2.7V, package / case 66-TSSOP (0.400", 10.16mm Width).
In Stock: 9,262
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR |
| Memory Size | 512Mb (64M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 700 ps |
| Voltage - Supply | 2.3V ~ 2.7V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 66-TSSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 66-TSOP II |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| IS43R16320F-5BLI-TR | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TFBGA | 100% | View |
| IS43R86400E-5BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TFBGA | 100% | View |
| MT46V64M8P-5B AIT:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | 100% | View |
| MT46V32M16CY-5B IT:J TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | 99% | View |
| IS46R16160F-6BLA2 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256MBIT PARALLEL 60TFBGA | 92% | View |
| IS43R86400E-6BLI | ISSI, Integrated Silicon Solution Inc | IC DRAM 512MBIT PARALLEL 60TFBGA | 92% | View |
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3J LIMITED
