512MB SERIAL NAND FLASH, 1.8V
W25N512GWFIT TR is a Memory manufactured by Winbond Electronics. 512MB SERIAL NAND FLASH, 1.8V. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 16-SOIC (0.295", 7.50mm Width).
In Stock: 4,424
| Attribute | Value |
|---|---|
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 512Mb (64M x 8) |
| Memory Interface | SPI - Quad I/O |
| Clock Frequency | 104 MHz |
| Write Cycle Time - Word, Page | 700µs |
| Access Time | 7 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOIC |
| Part Number | Manufacturer | Description | Match | |
|---|---|---|---|---|
| BY25FQ64ELTJG(R) | BYTe Semiconductor | 64 MBIT, 1.8V (1.65V TO 1.95V), | 86% | View |
| BY25D05ASTIG(T) | BYTe Semiconductor | IC FLASH 512KBIT SPI/DUAL 8SOP | 79% | View |
| BY25D05ASTIG(R) | BYTe Semiconductor | IC FLASH 512KBIT SPI/DUAL 8SOP | 79% | View |
| GD25LQ32ESIGR | GigaDevice Semiconductor (HK) Limited | 32MBIT NOR FLASH /1.8V /SOP8 208 | 71% | View |
| GD25Q16ETIGR | GigaDevice Semiconductor (HK) Limited | 16MBIT NOR FLASH /3.3V /SOP8 150 | 66% | View |
| GD25Q80ESIGR | GigaDevice Semiconductor (HK) Limited | 8MBIT NOR FLASH /3.3V /SOP8 208M | 66% | View |
Submit your RFQ for W25N512GWFIT TR and get a quote within 24 hours.
3J LIMITED
