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BY25FQ64ELTJG(R) - BYTe Semiconductor - Memory

BY25FQ64ELTJG(R)

BYTe Semiconductor

64 MBIT, 1.8V (1.65V TO 1.95V),

BY25FQ64ELTJG(R) is a Memory manufactured by BYTe Semiconductor. 64 MBIT, 1.8V (1.65V TO 1.95V),. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 105°C (TA), voltage - supply 1.65V ~ 2V, package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 2,051

Product Attributes

AttributeValue
DigiKey Programmable-
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NOR
Memory Size64Mbit
Memory Organization8M x 8
Memory InterfaceSPI - Quad I/O, QPI
Clock Frequency133 MHz
Write Cycle Time - Word, Page500µs, 2.5ms
Access Time7 ns
Voltage - Supply1.65V ~ 2V
Operating Temperature-40°C ~ 105°C (TA)
Grade-
Qualification-
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOP

Frequently Asked Questions

BY25FQ64ELTJG(R) is a Memory manufactured by BYTe Semiconductor. 64 MBIT, 1.8V (1.65V TO 1.95V),

The mounting type of BY25FQ64ELTJG(R) is Surface Mount.

The operating temperature range of BY25FQ64ELTJG(R) is -40°C ~ 105°C (TA).

The supply voltage of BY25FQ64ELTJG(R) is 1.65V ~ 2V.

The memory specification of BY25FQ64ELTJG(R) is 64Mbit.

Alternative Products

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EM064LXQAB313HS2T Everspin Technologies Inc. IC MRAM XSPI 100% View
EM064LXQADG13HS2T Everspin Technologies Inc. IC MRAM XSPI 100% View
EM128LXQAB313HS2T Everspin Technologies Inc. IC MRAM XSPI 100% View
BY25FQ32ELTJG(R) BYTe Semiconductor 32 MBIT, 1.8V (1.65V TO 1.95V), 82% View
GD25Q80ETEGR GigaDevice Semiconductor (HK) Limited IC FLASH 8MBIT SPI/QUAD 8SOP 80% View

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