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SQJB70EP-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SQJB70EP-T1_GE3

Vishay Siliconix

MOSFET 2 N-CH 100V POWERPAK SO8

SQJB70EP-T1_GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2 N-CH 100V POWERPAK SO8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 27W (Tc).

In Stock: 3,315

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C11.3A (Tc)
Rds On (Max) @ Id, Vgs95mOhm @ 4A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 25V
Power - Max27W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

Frequently Asked Questions

SQJB70EP-T1_GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2 N-CH 100V POWERPAK SO8

The mounting type of SQJB70EP-T1_GE3 is Surface Mount.

The operating temperature range of SQJB70EP-T1_GE3 is -55°C ~ 175°C (TJ).

The package type of SQJB70EP-T1_GE3 is PowerPAK® SO-8 Dual.

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