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SI4909DY-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI4909DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 40V 8A 8SO

SI4909DY-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 40V 8A 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width), power - max 3.2W.

In Stock: 5,584

Product Attributes

AttributeValue
Product StatusActive
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C8A
Rds On (Max) @ Id, Vgs27mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 20V
Power - Max3.2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Frequently Asked Questions

SI4909DY-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 40V 8A 8SO

The mounting type of SI4909DY-T1-GE3 is Surface Mount.

The operating temperature range of SI4909DY-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI4909DY-T1-GE3 is 8-SOIC (0.154", 3.90mm Width).

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