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SQ1912EH-T1_GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SQ1912EH-T1_GE3

Vishay Siliconix

MOSFET 2 N-CH 20V 800MA SC70-6

SQ1912EH-T1_GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2 N-CH 20V 800MA SC70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 1.5W.

In Stock: 2,932

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C800mA (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds75pF @ 10V
Power - Max1.5W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

Frequently Asked Questions

SQ1912EH-T1_GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2 N-CH 20V 800MA SC70-6

The mounting type of SQ1912EH-T1_GE3 is Surface Mount.

The operating temperature range of SQ1912EH-T1_GE3 is -55°C ~ 175°C (TJ).

The package type of SQ1912EH-T1_GE3 is 6-TSSOP, SC-88, SOT-363.

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