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SIS903DN-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SIS903DN-T1-GE3

Vishay Siliconix

MOSFET DUAL P-CHAN POWERPAK 1212

SIS903DN-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET DUAL P-CHAN POWERPAK 1212. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8 Dual, power - max 2.6W (Ta), 23W (Tc).

In Stock: 9,652

Product Attributes

AttributeValue
Product StatusActive
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2565pF @ 10V
Power - Max2.6W (Ta), 23W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

Frequently Asked Questions

SIS903DN-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET DUAL P-CHAN POWERPAK 1212

The mounting type of SIS903DN-T1-GE3 is Surface Mount.

The operating temperature range of SIS903DN-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SIS903DN-T1-GE3 is PowerPAK® 1212-8 Dual.

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