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SI7997DP-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI7997DP-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 60A PPAK SO-8

SI7997DP-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 30V 60A PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 46W.

In Stock: 4,507

Product Attributes

AttributeValue
Product StatusActive
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A
Rds On (Max) @ Id, Vgs5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds6200pF @ 15V
Power - Max46W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

Frequently Asked Questions

SI7997DP-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 30V 60A PPAK SO-8

The mounting type of SI7997DP-T1-GE3 is Surface Mount.

The operating temperature range of SI7997DP-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI7997DP-T1-GE3 is PowerPAK® SO-8 Dual.

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