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SI7980DP-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI7980DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 8A PPAK SO-8

SI7980DP-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 20V 8A PPAK SO-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 19.8W, 21.9W.

In Stock: 85

Product Attributes

AttributeValue
Product StatusObsolete
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8A
Rds On (Max) @ Id, Vgs22mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1010pF @ 10V
Power - Max19.8W, 21.9W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

Frequently Asked Questions

SI7980DP-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 20V 8A PPAK SO-8

The mounting type of SI7980DP-T1-GE3 is Surface Mount.

The operating temperature range of SI7980DP-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI7980DP-T1-GE3 is PowerPAK® SO-8 Dual.

Yes, SI7980DP-T1-GE3 is listed as Obsolete. Consider requesting a quote for alternative parts.

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