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SI7900AEDN-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI7900AEDN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 6A 1212-8

SI7900AEDN-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 20V 6A 1212-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® 1212-8 Dual, power - max 1.5W.

In Stock: 50,447

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

Frequently Asked Questions

SI7900AEDN-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 20V 6A 1212-8

The mounting type of SI7900AEDN-T1-E3 is Surface Mount.

The operating temperature range of SI7900AEDN-T1-E3 is -55°C ~ 150°C (TJ).

The package type of SI7900AEDN-T1-E3 is PowerPAK® 1212-8 Dual.

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