RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
SI7252DP-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI7252DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 100V 36.7A PPAK 8SO

SI7252DP-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 100V 36.7A PPAK 8SO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® SO-8 Dual, power - max 46W.

In Stock: 7,204

Product Attributes

AttributeValue
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C36.7A
Rds On (Max) @ Id, Vgs18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1170pF @ 50V
Power - Max46W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

Frequently Asked Questions

SI7252DP-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 100V 36.7A PPAK 8SO

The mounting type of SI7252DP-T1-GE3 is Surface Mount.

The operating temperature range of SI7252DP-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI7252DP-T1-GE3 is PowerPAK® SO-8 Dual.

Related Products

Manufacturers in Transistors - FETs, MOSFETs - Arrays

Need a Quote for This Part?

Submit your RFQ for SI7252DP-T1-GE3 and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.