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SI6913DQ-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI6913DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 4.9A 8-TSSOP

SI6913DQ-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 12V 4.9A 8-TSSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-TSSOP (0.173", 4.40mm Width), power - max 830mW.

In Stock: 6,313

Product Attributes

AttributeValue
Product StatusActive
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4.9A
Rds On (Max) @ Id, Vgs21mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id900mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

Frequently Asked Questions

SI6913DQ-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 12V 4.9A 8-TSSOP

The mounting type of SI6913DQ-T1-GE3 is Surface Mount.

The operating temperature range of SI6913DQ-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI6913DQ-T1-GE3 is 8-TSSOP (0.173", 4.40mm Width).

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