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SI5517DU-T1-GE3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI5517DU-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 6A CHIPFET

SI5517DU-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 6A CHIPFET. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case PowerPAK® ChipFET™ Dual, power - max 8.3W.

In Stock: 8,184

Product Attributes

AttributeValue
Product StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs39mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds520pF @ 10V
Power - Max8.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® ChipFET™ Dual
Supplier Device PackagePowerPAK® ChipFet Dual

Frequently Asked Questions

SI5517DU-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 6A CHIPFET

The mounting type of SI5517DU-T1-GE3 is Surface Mount.

The operating temperature range of SI5517DU-T1-GE3 is -55°C ~ 150°C (TJ).

The package type of SI5517DU-T1-GE3 is PowerPAK® ChipFET™ Dual.

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