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SI5513CDC-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI5513CDC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

SI5513CDC-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 4A 1206-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SMD, Flat Lead, power - max 3.1W.

In Stock: 5,993

Product Attributes

AttributeValue
Product StatusActive
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A, 3.7A
Rds On (Max) @ Id, Vgs55mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds285pF @ 10V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

Frequently Asked Questions

SI5513CDC-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET N/P-CH 20V 4A 1206-8

The mounting type of SI5513CDC-T1-E3 is Surface Mount.

The operating temperature range of SI5513CDC-T1-E3 is -55°C ~ 150°C (TJ).

The package type of SI5513CDC-T1-E3 is 8-SMD, Flat Lead.

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