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SI1965DH-T1-E3 - Vishay Siliconix - Transistors - FETs, MOSFETs - Arrays

SI1965DH-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

SI1965DH-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 12V 1.3A SC70-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 1.25W.

In Stock: 1,030

Product Attributes

AttributeValue
Product StatusActive
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C1.3A
Rds On (Max) @ Id, Vgs390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds120pF @ 6V
Power - Max1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

Frequently Asked Questions

SI1965DH-T1-E3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2P-CH 12V 1.3A SC70-6

The mounting type of SI1965DH-T1-E3 is Surface Mount.

The operating temperature range of SI1965DH-T1-E3 is -55°C ~ 150°C (TJ).

The package type of SI1965DH-T1-E3 is 6-TSSOP, SC-88, SOT-363.

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