MOSFET 2N-CH 60V 0.37A SOT363
SI1926DL-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays manufactured by Vishay Siliconix. MOSFET 2N-CH 60V 0.37A SOT363. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 510mW.
In Stock: 2,174
| Attribute | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 370mA |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 340mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 30V |
| Power - Max | 510mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 |
Submit your RFQ for SI1926DL-T1-GE3 and get a quote within 24 hours.
3J LIMITED
