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ULN2803AFWG,C,EL - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays

ULN2803AFWG,C,EL

Toshiba Semiconductor and Storage

TRANS 8NPN DARL 50V 0.5A 18SOL

ULN2803AFWG,C,EL is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS 8NPN DARL 50V 0.5A 18SOL. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), package / case 18-SOIC (0.295", 7.50mm Width), current - collector (ic) (max) 500mA.

In Stock: 3,786

Product Attributes

AttributeValue
Product StatusObsolete
Transistor Type8 NPN Darlington
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 350mA, 2V
Power - Max1.31W
Frequency - Transition-
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case18-SOIC (0.295", 7.50mm Width)
Supplier Device Package18-SOP

Frequently Asked Questions

ULN2803AFWG,C,EL is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. TRANS 8NPN DARL 50V 0.5A 18SOL

The mounting type of ULN2803AFWG,C,EL is Surface Mount.

The operating temperature range of ULN2803AFWG,C,EL is -40°C ~ 85°C (TA).

The package type of ULN2803AFWG,C,EL is 18-SOIC (0.295", 7.50mm Width).

Yes, ULN2803AFWG,C,EL is listed as Obsolete. Consider requesting a quote for alternative parts.

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