RFQ List

No items in your RFQ list

Estimated Total: $0.00
View RFQ List
HN1C03FU-B,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Arrays

HN1C03FU-B,LF

Toshiba Semiconductor and Storage

NPN + NPN IND. TRANSISTOR VCEO20

HN1C03FU-B,LF is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. NPN + NPN IND. TRANSISTOR VCEO20. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, current - collector (ic) (max) 300mA.

In Stock: 12,010

Product Attributes

AttributeValue
Product StatusActive
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)300mA
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic100mV @ 3mA, 30A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce350 @ 4mA, 2V
Power - Max200mW
Frequency - Transition30MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6

Frequently Asked Questions

HN1C03FU-B,LF is a Transistors - Bipolar (BJT) - Arrays manufactured by Toshiba Semiconductor and Storage. NPN + NPN IND. TRANSISTOR VCEO20

The mounting type of HN1C03FU-B,LF is Surface Mount.

The operating temperature range of HN1C03FU-B,LF is 150°C (TJ).

The package type of HN1C03FU-B,LF is 6-TSSOP, SC-88, SOT-363.

Related Products

Manufacturers in Transistors - Bipolar (BJT) - Arrays

Need a Quote for This Part?

Submit your RFQ for HN1C03FU-B,LF and get a quote within 24 hours.

Top
Live Chat
Hello! How can we help you today? Feel free to ask about pricing, availability, or technical details.